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Figures of the Article
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Photos of the HPK-1.2 (a) and USTC-1.1-W8 (b) single pad LGAD prototypes tested at USTC.
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I-V results of the HPK-1.2, HPK-3.2 and USTC-1.1-W8 LGADs at difference fluences. The measurements are preformed at T = 20 ℃(room temperature) for all samples and T = −30 ℃ for USTC sensors with guard rings grounded.
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The ΔI/V at different fluences calculated from Room T. I-V for HPK-1.2, HPK-3.2 and USTC-1.1-W8 sensors used to estimate the α-factor representing the damages generated in the bulk region.
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1/C2 -V of the HPK-1.2, HPK-3.2 and USTC-1.1-W8 LGADs at difference fluences. The measurements are preformed at T = 20 ℃, with guard rings grounded.
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Fraction of active acceptor dose changes with fluences measured from the room-temperature C-V. is shown as a function of fluences. The active acceptor density degrades significantly after 1E + 15.
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The doping profile before and after 8E+14, 1.5E+15 irradiation fluences of USTC-1.1-W8 LGAD samples. The doping density of each point is calculated by the average of the doping densities from the samples with the same fluence and average the results in each interval to suppress the fluctuation.
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VGL as a function of fluences of all prototypes tested.
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The c-factor as a function of initial doping density (ρ0) measured from USTC-1.1-W8 irradiated samples.
