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Open AccessOpen Access JUSTC Chemistry；Engineering & Materials 15 July 2024

Effect of substrate temperature and oxygen plasma treatment on the properties of magnetron-sputtered CdS for solar cell applications

  • Department of Materials Science and Engineering, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, China

Cite this:
https://doi.org/10.52396/JUSTC-2024-0048
More Information
  • Author Bio:

    Runxuan Zang is currently a master’s student at the University of Science and Technology of China under the supervision of Prof. Tao Chen. His research mainly focuses on the application of magnetron sputtered CdS in antimony chalcogenide solar cells

    Tao Chen is a Professor in the Department of Materials Science and Engineering, University of Science and Technology of China. He received his Ph.D. degree in Chemistry from Nanyang Technological University in 2010. His research mainly focuses on metal chalcogenide solar cells and energy storage materials and devices

  • Corresponding author: E-mail: tchenmse@ustc.edu.cn
  • Received Date: 26 March 2024
  • Accepted Date: 14 May 2024
    • Available Online: 15 July 2024
    Abstract

  • Abstract

    Cadmium sulfide (CdS) is an n-type semiconductor with excellent electrical conductivity that is widely used as an electron transport material (ETM) in solar cells. At present, numerous methods for preparing CdS thin films have emerged, among which magnetron sputtering (MS) is one of the most commonly used vacuum techniques. For this type of technique, the substrate temperature is one of the key deposition parameters that affects the interfacial properties between the target film and substrate, determining the specific growth habits of the films. Herein, the effect of substrate temperature on the microstructure and electrical properties of magnetron-sputtered CdS (MS-CdS) films was studied and applied for the first time in hydrothermally deposited antimony selenosulfide (Sb2(S,Se)3) solar cells. Adjusting the substrate temperature not only results in the design of the flat and dense film with enhanced crystallinity but also leads to the formation of an energy level arrangement with a Sb2(S,Se)3 layer that is more favorable for electron transfer. In addition, we developed an oxygen plasma treatment for CdS, reducing the parasitic absorption of the device and resulting in an increase in the short-circuit current density of the solar cell. This study demonstrates the feasibility of MS-CdS in the fabrication of hydrothermal Sb2(S,Se)3 solar cells and provides interface optimization strategies to improve device performance.

    Graphical abstract

    Under substrate heating conditions, the CdS thin film prepared by magnetron sputtering has a flat and dense morphology with enhanced crystallinity.

    Abstract

    Cadmium sulfide (CdS) is an n-type semiconductor with excellent electrical conductivity that is widely used as an electron transport material (ETM) in solar cells. At present, numerous methods for preparing CdS thin films have emerged, among which magnetron sputtering (MS) is one of the most commonly used vacuum techniques. For this type of technique, the substrate temperature is one of the key deposition parameters that affects the interfacial properties between the target film and substrate, determining the specific growth habits of the films. Herein, the effect of substrate temperature on the microstructure and electrical properties of magnetron-sputtered CdS (MS-CdS) films was studied and applied for the first time in hydrothermally deposited antimony selenosulfide (Sb2(S,Se)3) solar cells. Adjusting the substrate temperature not only results in the design of the flat and dense film with enhanced crystallinity but also leads to the formation of an energy level arrangement with a Sb2(S,Se)3 layer that is more favorable for electron transfer. In addition, we developed an oxygen plasma treatment for CdS, reducing the parasitic absorption of the device and resulting in an increase in the short-circuit current density of the solar cell. This study demonstrates the feasibility of MS-CdS in the fabrication of hydrothermal Sb2(S,Se)3 solar cells and provides interface optimization strategies to improve device performance.

    • Public Summary

    • Substrate heating was used during the sputtering process to improve the quality of the CdS thin film.
    • A higher crystallinity and smoother surface as well as a good energy level matching between the CdS and Sb2(S,Se)3 absorber layers are achieved.
    • Oxygen plasma treatment was used to treat the CdS layer to reduce Se diffusion during the annealing process, which improves the JSC and power conversion efficiency of solar cells.
    • A solar cell device with a power conversion efficiency of 8.09% is achieved, which is the highest among all antimony chalcogenide solar cells based on a sputtered CdS window layer.

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    • References(50)
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    Figure  1.  X-ray diffraction (XRD) pattern of the sputtered CdS thin film. The deposition time was 2 h, four times the standard CdS growth time. (a) CdS sputtered on a glass substrate at different temperatures. (b) CdS sputtered on an FTO substrate. The positions of the FTO diffraction peaks are labeled with asterisks. (c) Grazing incidence XRD (GIXRD) result of CdS sputtered on an FTO substrate. The incident angle is 0.4°, and no FTO substrate peaks are found.

    Figure  2.  SEM image of sputtered CdS. The first row shows sputtered CdS without ambient air annealing. The second row shows sputtered CdS with CdCl2 spin coating and ambient air annealing posttreatment. The four columns show CdS sputtered at RT, 150 °C, 200 °C and 250 °C from left to right.

    Figure  3.  Characterization of Sb2(S,Se)3 thin films grown on sputtered CdS. (a) XRD pattern of the Sb2(S,Se)3 thin film. (b) Statistics on the grain size of the Sb2(S,Se)3 thin film. SEM image of a Sb2(S,Se)3 thin film (c) grown on RT-sputtered CdS and (d) grown on 200 °C-sputtered CdS.

    Figure  4.  UPS spectra of (a) RT-sputtered CdS, (b) substrate heat-sputtered CdS and (c) Sb2(S,Se)3 thin films. (d, e) Band alignment diagram of the Sb2(S,Se)3 solar cell devices.

    Figure  5.  Photovoltaic performance of the devices. (a) Current density–voltage (J–V) curves of Sb2(S,Se)3 solar cell devices grown on sputtered CdS under different substrate heating conditions. Statistical boxplots of the photovoltaic parameters (b) power conversion efficiency (PCE), (c) short-circuit current density (JSC), (e) open-circuit voltage (VOC), and (f) fill factor (FF) of the corresponding devices. (d) External quantum efficiency (EQE) spectra of the corresponding devices.

    Figure  6.  Characterization of Sb2(S,Se)3 solar cell devices grown on sputtered CdS under different substrate heating conditions. Dark current results are shown in the first row with (a) J–V curve, (b) dJ/dV versus voltage plot, and (c) dV/dJ versus (J+JSC)−1 plot. Here, the dark J–V data were measured starting at +3 V, so that (J+JSC)−1 increased to approximately 0.002 mA−1·cm2. Under very high voltage conditions, the derivative increases, forming a tail at the end of the curve. However, this does not influence the analysis by using the well-defined linear part of the curve. The light intensity, electrochemical characterization and carrier transport kinetics of the devices are shown next. (d) Relation between VOC and the logarithm of the incident light intensity. (e) Relation between JSC and the incident light intensity. (f) Nyquist plots (under dark conditions at −0.60 V) of the devices. (g) Original data and fitted curves of transient decay kinetics monitored at 665 nm for Sb2(S,Se)3 films grown on sputtered CdS at RT and at 200 °C.

    Figure  7.  Characterization related to oxygen plasma treatment of sputtered CdS. (a) Full-wavelength EQE spectra of devices with (15 min) and without oxygen plasma treatment (OPT). (b) Champion device efficiency with and without oxygen plasma treatment. (c) Oxygen content and Cd∶S ratio under different oxygen plasma treatment conditions. The results are based on EDS data. (d) The 1/C2–V curves of the devices recorded at a frequency of 100 kHz at RT in the dark.

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    [2]
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    [16]
    Schwartz C, Nordlund D, Weng T C, et al. Electronic structure study of the CdS buffer layer in CIGS solar cells by X-ray absorption spectroscopy: experiment and theory. Solar Energy Materials and Solar Cells, 2016, 149 (1): 275–283. doi: 10.1016/j.solmat.2016.01.043
    [17]
    Ge J, Koirala P, Grice C R, et al. Oxygenated CdS buffer layers enabling high open-circuit voltages in earth-abundant Cu2BaSnS4 thin-film solar cells. Advanced Energy Materials, 2017, 7 (6): 1601803. doi: 10.1002/aenm.201601803
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    Guo L, Zhang B, Ranjit S, et al. Interface engineering via sputtered oxygenated CdS: O window layer for highly efficient Sb2Se3 thin-film solar cells with efficiency above 7%. Solar RRL, 2019, 3 (10): 1900225. doi: 10.1002/solr.201900225
    [19]
    Hu X B, Tao J H, Wang Y Y, et al. 5.91%-efficient Sb2Se3 solar cells with a radio-frequency magnetron-sputtered CdS buffer layer. Applied Materials Today, 2019, 16 (1): 367–374. doi: 10.1016/j.apmt.2019.06.001
    [20]
    Kephart J M, Geisthardt R M, Sampath W S. Optimization of CdTe thin-film solar cell efficiency using a sputtered, oxygenated CdS window layer. Progress in Photovoltaics: Research and Applications, 2015, 23 (11): 1484–1492. doi: 10.1002/pip.2578
    [21]
    Liu Y F, Li B, Liang X Y, et al. Reactively sputtered CdS: O buffer layers for substrate Sb2Se3 solar cells. Journal of Alloys and Compounds, 2023, 932 (1): 167313. doi: 10.1016/j.jallcom.2022.167313
    [22]
    Ou C Z, Shen K, Li Z Q, et al. Bandgap tunable CdS: O as efficient electron buffer layer for high-performance Sb2Se3 thin film solar cells. Solar Energy Materials and Solar Cells, 2019, 194: 47–53. doi: 10.1016/j.solmat.2019.01.043
    [23]
    Paudel N R, Poplawsky J D, Moore K L, et al. Current enhancement of CdTe-based solar cells. IEEE Journal of Photovoltaics, 2015, 5 (5): 1492–1496. doi: 10.1109/JPHOTOV.2015.2458040
    [24]
    Shiel H, Hutter O S, Phillips L J, et al. Natural band alignments and band offsets of Sb2Se3 solar cells. ACS Applied Energy Materials, 2020, 3 (12): 11617–11626. doi: 10.1021/acsaem.0c01477
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