Abstract
La2Ti2O7 thin films were grown on Si (100) substrates by using pulsed laser deposition method. The effect of post-annealing on the structural and dielectric properties of the films at different temperatures was studied by using X-ray diffraction, atomic force microscopy and synchrotron infrared transmission spectroscopy. The results show that the as-deposited thin film is amorphous and annealing thin film is crystallized into monoclinic structure. The infrared spectrum reveals that the annealing can significantly increase the dielectric constant. The as-deposited thin film has a low dielectric constant attributed to the loss of some phonon modes, especially the low frequency mode. This indicates post-annealing has an important influence on the dielectric property of La2Ti2O7 thin film.
Abstract
La2Ti2O7 thin films were grown on Si (100) substrates by using pulsed laser deposition method. The effect of post-annealing on the structural and dielectric properties of the films at different temperatures was studied by using X-ray diffraction, atomic force microscopy and synchrotron infrared transmission spectroscopy. The results show that the as-deposited thin film is amorphous and annealing thin film is crystallized into monoclinic structure. The infrared spectrum reveals that the annealing can significantly increase the dielectric constant. The as-deposited thin film has a low dielectric constant attributed to the loss of some phonon modes, especially the low frequency mode. This indicates post-annealing has an important influence on the dielectric property of La2Ti2O7 thin film.