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Open AccessOpen Access JUSTC Chemistry/Physics 20 April 2022

TiO2-assisted GaN-nanowire-based stable ultraviolet photoelectrochemical detection

  • School of Microelectronics, University of Science and Technology of China, Hefei 230029, China

Cite this:
https://doi.org/10.52396/JUSTC-2021-0205
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  • Author Bio:

    Yang Kang is currently pursuing his Master Degree in School of Microelectronics at University of Science and Technology of China. His primary research is related with optoelectronic materials and devices. He has published first author papers including IEEE Transation on Electronic Devices, ACS Applied Nano Materials, etc

    Xin Liu is currently pursuing his Master Degree in School of Microelectronics at University of Science and Technology of China. His primary research is related with optoelectronic materials and devices. He has published first author papers including Advanced Functional Materials etc

    Haiding Sun received his Ph.D. in Electrical Engineering from Boston University. He is currently a Professor in the School of Microelectronics at University of Science and Technology of China. He has published more than 90+ peer-reviewed SCI-index journal papers including Nature Electronics, Advanced Functional Materials, Nano Letters, IEEE Electron Device Letters, Applied Physics Letters etc. His research interests include the investigation of the physics, MBE and MOCVD epitaxy, fabrication, and characterization of wide bandgap semiconductor materials for both optoelectronics and electronic devices. His work has been highlighted by more than 100 times in many media outlets including Compound Semiconductors, Semiconductors Today, Phys.org, Nanowerk etc. He is an IEEE Senior Member. He is currently Associated Editor of IEEE Photonics Technology Letters, SPIE Journal of Nanophotonics, ASME Open Journal of Engineering, and Guest Editor of Journal of Electronic Packaging and Crystal

  • Corresponding author: E-mail: haiding@ustc.edu.cn
  • Received Date: 14 September 2021
  • Accepted Date: 29 December 2021
    • Available Online: 20 April 2022
    Abstract

  • Abstract

    Ultraviolet photodetection plays an important role in optical communication and chemical- and bio- related sensing applications. Gallium nitride (GaN) nanowires-based photoelectrochemical-type photodetectors, which operate particularly in acqueous conditions, have been attracted extensive interest because of their low cost, fast photoresponse, and excellent responsivity. However, GaN nanowires, which have a large surface-to-volume ratio, suffer suffered from instability in photoelectrochemical environments because of photocorrosion. In this study, the structural and photoelectrochemical properties of GaN nanowires with improved photoresponse and chemical stability obtained by coating the nanowire surface with an ultrathin TiO2 protective layer were investigated. The photocurrent density of TiO2-coated GaN nanowires changed minimally over a relatively long operation time of 2000 s under 365-nm illumination. Meanwhile, the attenuation coefficient of the photocurrent density could be reduced to 49%, whereas it is as high as 85% in uncoated GaN nanowires. Furthermore, the photoelectrochemical behavior of the nanowires was investigated through electrochemical impedance spectroscopy measurements. The results shed light on the construction of long-term-stable GaN-nanowire-based photoelectrochemical-type photodetectors.

    Graphical abstract

      Ultrathin TiO2 protecting layer improves the photostability of GaN-nanowire-based photoelectrochemical ultraviolet photodetectors.

    Abstract

    Ultraviolet photodetection plays an important role in optical communication and chemical- and bio- related sensing applications. Gallium nitride (GaN) nanowires-based photoelectrochemical-type photodetectors, which operate particularly in acqueous conditions, have been attracted extensive interest because of their low cost, fast photoresponse, and excellent responsivity. However, GaN nanowires, which have a large surface-to-volume ratio, suffer suffered from instability in photoelectrochemical environments because of photocorrosion. In this study, the structural and photoelectrochemical properties of GaN nanowires with improved photoresponse and chemical stability obtained by coating the nanowire surface with an ultrathin TiO2 protective layer were investigated. The photocurrent density of TiO2-coated GaN nanowires changed minimally over a relatively long operation time of 2000 s under 365-nm illumination. Meanwhile, the attenuation coefficient of the photocurrent density could be reduced to 49%, whereas it is as high as 85% in uncoated GaN nanowires. Furthermore, the photoelectrochemical behavior of the nanowires was investigated through electrochemical impedance spectroscopy measurements. The results shed light on the construction of long-term-stable GaN-nanowire-based photoelectrochemical-type photodetectors.

    • Public Summary

    • Using the atomic layer deposition technique, a thickness of 4 nm TiO2 protective layer was deposited on the GaN nanowires.
    • The ultrathin TiO2 protective layer can protect the GaN segment from corrosion and oxidation.
    • The photocurrent-attenuation coefficient of the coated GaN nanowires can be alleviated to 49%, while this number is as high as 85% in those uncoated GaN nanowires.

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    • References(19)
  • [1]
    Mauthe S, Baumgartner Y, Sousa M, et al. High-speed III-V nanowire photodetector monolithically integrated on Si. Nat. Commun., 2020, 11 (1): 4565. doi: 10.1038/s41467-020-18374-z
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    Wang Y, Wu C, Guo D, et al. All-oxide NiO/Ga2O3 P–N junction for self-powered UV photodetector. ACS Appl. Electron. Mater., 2020, 2 (7): 2032–2038. doi: 10.1021/acsaelm.0c00301
    [3]
    Gao Y, Lei S, Kang T, et al. Bias-switchable negative and positive photoconductivity in 2D FePS3 ultraviolet photodetectors. Nanotechnology, 2018, 29 (24): 244001. doi: 10.1088/1361-6528/aab9d2
    [4]
    Zhang T F, Wu G A, Wang J Z, el al. A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction. Nanophotonics, 2016, 6 (5): 1073–1081. doi: 10.1515/nanoph-2016-0143
    [5]
    An Q, Meng X, Xiong K, et al. Self-powered ZnS nanotubes/Ag nanowires MSM UV photodetector with high On/Off Ratio and fast response speed. Sci. Rep., 2017, 7 (1): 4885. doi: 10.1038/s41598-017-05176-5
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    Wang D, Liu X, Fang S, et al. Pt/AlGaN nanoarchitecture: Toward High Responsivity, Self-Powered Ultraviolet-Sensitive Photodetection. Nano Lett., 2021, 21 (1): 120–129. doi: 10.1021/acs.nanolett.0c03357
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    [8]
    Fang S, Wang D, Wang X, et al. Tuning the charge transfer dynamics of the nanostructured GaN photoelectrodes for efficient photoelectrochemical detection in the ultraviolet band. Adv. Funct. Mater., 2021, 31 (29): 2103007. doi: 10.1002/adfm.202103007
    [9]
    Wang Q, Yuan G, Zhao S, et al. Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution. Electrochem. Commun., 2019, 103: 66–71. doi: 10.1016/j.elecom.2019.05.005
    [10]
    Liu G, Karuturi S K, Simonov A N, et al. Robust Sub‐monolayers of Co3O4 nano‐islands: A highly transparent morphology for efficient water oxidation catalysis. Adv. Energy Mater., 2016, 6 (15): 1600697. doi: 10.1002/aenm.201600697
    [11]
    Steier L, Bellani S, Rojas H C, et al. Stabilizing organic photocathodes by low-temperature atomic layer deposition of TiO2. Sustain. Energy Fuels, 2017, 1 (9): 1915–1920. doi: 10.1039/C7SE00421D
    [12]
    Chen Y W, Prange J D, Duhnen S, et al. Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation. Nat. Mater., 2011, 10 (7): 539–544. doi: 10.1038/nmat3047
    [13]
    Hu S, Shaner M R, Beardslee J A, et al. Amorphous TiO2 coatings stabilize Si, GaAs, and GaP photoanodes for efficient water oxidation. Science, 2014, 344 (6187): 1005–1009. doi: 10.1126/science.1251428
    [14]
    Hisatomi T, Kubota J, Domen K. Recent advances in semiconductors for photocatalytic and photoelectrochemical water splitting. Chem. Soc. Rev., 2014, 43 (22): 7520–7535. doi: 10.1039/C3CS60378D
    [15]
    Ohkawa K, Ohara W, Uchida D, et al. Highly stable GaN photocatalyst for producing H2 gas from water. JPN. J. Appl. Phys., 2013, 52 (8S): 08JH04. doi: 10.7567/JJAP.52.08JH04
    [16]
    Park K, Zhang Q, Garcia B B, et al. Effect of an ultrathin TiO2 layer coated on submicrometer-sized ZnO nanocrystallite aggregates by atomic layer deposition on the performance of dye-sensitized solar cells. Adv. Mater., 2010, 22 (21): 2329–2332. doi: 10.1002/adma.200903219
    [17]
    Mushtaq N, Xia C, Dong W, et al. Tuning the energy band structure at interfaces of the SrFe0.75Ti0.25O3-delta-Sm0.25Ce0.75O2-delta heterostructure for fast Ionic transport. ACS Appl. Mater. Inter, 2019, 11 (42): 38737–38745. doi: 10.1021/acsami.9b13044
    [18]
    Bahari H S, Savaloni H. Surface analysis of Cu coated with ALD Al2O3 and its corrosion protection enhancement in NaCl solution: EIS and polarization. Mater. Res. Express, 2019, 6 (8): 086570. doi: 10.1088/2053-1591/ab1abd
    [19]
    Yousaf M, Mushtaq N, Zhu B, et al. Electrochemical properties of Ni0.4Zn0.6 Fe2O4 and the heterostructure composites (Ni–Zn ferrite-SDC) for low temperature solid oxide fuel cell (LT-SOFC). Electrochimica Acta, 2020, 331: 135349. doi: 10.1016/j.electacta.2019.135349
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    Figure  1.  (a) Schematic illustration of ALD decoration process. (b) Overview of the TEM image of GaN@TiO2 nanowire (scale bar, 100 nm). (c) Selected-area TEM image of GaN@TiO2 nanowire (scale bar, 10 nm). (d) STEM image of GaN@TiO2 nanowire (scale bar, 100 nm). (e) EDS line profiles of Ga, N, Ti, and O across the GaN@TiO2 nanowire. (f) Top-view SEM images of GaN nanowires (top; scale bar, 500 nm) and GaN@TiO2 nanowires (middle; scale bar, 500 nm), and side-view SEM image of GaN@TiO2 nanowires (bottom; scale bar, 500 nm).

    Figure  2.  (a) Schematic illustration of the operation of the GaN@TiO2-nanowire-based PEC UV-PDs under UV light irradiation. (b) Bare GaN nanowire surface in which photocorrosion predominates. (c) GaN coated with TiO2 layer, where photogenerated holes can oxidize OH− to O2.

    Figure  3.  (a) J-t characteristics of GaN-nanowire-based PEC UV-PDs under 365 nm irradiation. (b) Representation of the rise time and decay time interval of GaN-nanowire-based PEC UV-PDs. (c) GaN@TiO2-nanowire-based PEC UV-PDs under 365 nm irradiation. (d) Representation of the rise time and decay time interval of GaN@TiO2-nanowire-based PEC UV-PDs.

    Figure  4.  Photoelectrochemical impedance spectra of (a) GaN-nanowire-based and (b) GaN@TiO2-nanowire-based PEC UV-PDs under 365 nm irradiation.

    [1]
    Mauthe S, Baumgartner Y, Sousa M, et al. High-speed III-V nanowire photodetector monolithically integrated on Si. Nat. Commun., 2020, 11 (1): 4565. doi: 10.1038/s41467-020-18374-z
    [2]
    Wang Y, Wu C, Guo D, et al. All-oxide NiO/Ga2O3 P–N junction for self-powered UV photodetector. ACS Appl. Electron. Mater., 2020, 2 (7): 2032–2038. doi: 10.1021/acsaelm.0c00301
    [3]
    Gao Y, Lei S, Kang T, et al. Bias-switchable negative and positive photoconductivity in 2D FePS3 ultraviolet photodetectors. Nanotechnology, 2018, 29 (24): 244001. doi: 10.1088/1361-6528/aab9d2
    [4]
    Zhang T F, Wu G A, Wang J Z, el al. A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction. Nanophotonics, 2016, 6 (5): 1073–1081. doi: 10.1515/nanoph-2016-0143
    [5]
    An Q, Meng X, Xiong K, et al. Self-powered ZnS nanotubes/Ag nanowires MSM UV photodetector with high On/Off Ratio and fast response speed. Sci. Rep., 2017, 7 (1): 4885. doi: 10.1038/s41598-017-05176-5
    [6]
    Wang D, Liu X, Fang S, et al. Pt/AlGaN nanoarchitecture: Toward High Responsivity, Self-Powered Ultraviolet-Sensitive Photodetection. Nano Lett., 2021, 21 (1): 120–129. doi: 10.1021/acs.nanolett.0c03357
    [7]
    Wang D, Huang C, Liu X, et al. Highly uniform, self‐assembled AlGaN nanowires for self‐powered solar‐blind photodetector with fast‐response speed and high responsivity. Adv. Opt. Mater., 2020, 9 (4): 2000893. doi: 10.1002/adom.202000893
    [8]
    Fang S, Wang D, Wang X, et al. Tuning the charge transfer dynamics of the nanostructured GaN photoelectrodes for efficient photoelectrochemical detection in the ultraviolet band. Adv. Funct. Mater., 2021, 31 (29): 2103007. doi: 10.1002/adfm.202103007
    [9]
    Wang Q, Yuan G, Zhao S, et al. Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution. Electrochem. Commun., 2019, 103: 66–71. doi: 10.1016/j.elecom.2019.05.005
    [10]
    Liu G, Karuturi S K, Simonov A N, et al. Robust Sub‐monolayers of Co3O4 nano‐islands: A highly transparent morphology for efficient water oxidation catalysis. Adv. Energy Mater., 2016, 6 (15): 1600697. doi: 10.1002/aenm.201600697
    [11]
    Steier L, Bellani S, Rojas H C, et al. Stabilizing organic photocathodes by low-temperature atomic layer deposition of TiO2. Sustain. Energy Fuels, 2017, 1 (9): 1915–1920. doi: 10.1039/C7SE00421D
    [12]
    Chen Y W, Prange J D, Duhnen S, et al. Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation. Nat. Mater., 2011, 10 (7): 539–544. doi: 10.1038/nmat3047
    [13]
    Hu S, Shaner M R, Beardslee J A, et al. Amorphous TiO2 coatings stabilize Si, GaAs, and GaP photoanodes for efficient water oxidation. Science, 2014, 344 (6187): 1005–1009. doi: 10.1126/science.1251428
    [14]
    Hisatomi T, Kubota J, Domen K. Recent advances in semiconductors for photocatalytic and photoelectrochemical water splitting. Chem. Soc. Rev., 2014, 43 (22): 7520–7535. doi: 10.1039/C3CS60378D
    [15]
    Ohkawa K, Ohara W, Uchida D, et al. Highly stable GaN photocatalyst for producing H2 gas from water. JPN. J. Appl. Phys., 2013, 52 (8S): 08JH04. doi: 10.7567/JJAP.52.08JH04
    [16]
    Park K, Zhang Q, Garcia B B, et al. Effect of an ultrathin TiO2 layer coated on submicrometer-sized ZnO nanocrystallite aggregates by atomic layer deposition on the performance of dye-sensitized solar cells. Adv. Mater., 2010, 22 (21): 2329–2332. doi: 10.1002/adma.200903219
    [17]
    Mushtaq N, Xia C, Dong W, et al. Tuning the energy band structure at interfaces of the SrFe0.75Ti0.25O3-delta-Sm0.25Ce0.75O2-delta heterostructure for fast Ionic transport. ACS Appl. Mater. Inter, 2019, 11 (42): 38737–38745. doi: 10.1021/acsami.9b13044
    [18]
    Bahari H S, Savaloni H. Surface analysis of Cu coated with ALD Al2O3 and its corrosion protection enhancement in NaCl solution: EIS and polarization. Mater. Res. Express, 2019, 6 (8): 086570. doi: 10.1088/2053-1591/ab1abd
    [19]
    Yousaf M, Mushtaq N, Zhu B, et al. Electrochemical properties of Ni0.4Zn0.6 Fe2O4 and the heterostructure composites (Ni–Zn ferrite-SDC) for low temperature solid oxide fuel cell (LT-SOFC). Electrochimica Acta, 2020, 331: 135349. doi: 10.1016/j.electacta.2019.135349
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