[1] |
胡林辉, 谢家纯, 王丽玉, 等. 4H-SiC肖特基势垒二极管温度特性研究[J]. 中国科学技术大学学报, 2003, 33(6): 688-691.HU Linhui, XIE Jiachun, WANG Liyu,et al.Temperature characteristics of 4H-SiC Schottky barrier diodes[J]. Journal of University of Science and Technoloty of China, 2003, 33(6): 688-691.
|
[2] |
徐军, 谢家纯, 董小波, 等. 宽禁带SiC肖特基势垒二极管的研制[J]. 中国科学技术大学学报, 2002, 32(3): 320-323.XU Jun, XIE Jiachun, DONG Xiaobao, WANG Keyan, et al. Ni Schottky barrier diodes on n-type 4H-Silicon Carbide[J]. Journal of University of Science and Technoloty of China, 2002, 32(3): 320-323.
|
[3] |
孙凯, 陆钰晶, 吴红飞, 等.碳化硅MOSFET的变温度参数建模[J].中国电机工程学报, 2013, 33(3): 37-43.SUN Kai, LU Juejing, WU Hongfei, et al. Modeling of SiC MOSFET with temperature dependent parameter[J].Proceedings of the CSEE, 2013, 33(3): 37-43.
|
[4] |
WANG J, ZHAO T, LI J, et al. Characterization, modeling and application of 10 kV SiC MOSFET[J]. IEEE Transactions on Electron Devices, 2008, 55(8): 1798-1805.
|
[5] |
PUSHPAKARAN B N, BAYNE S, OGUNNIYI A A, et al. Physics-based simulation of 4H-SiC DMOSFET structure under inductive switching[J]. Journal of Computational Electronics, 2016, 1(15): 191-199.
|
[6] |
POTBHARE S, GOLDSMAN N, LELIS A, et al. A physical model of high temperature 4H-SiC MOSFETs[J]. IEEE Transactions on Electron Devices, 2008, 55(8): 2029-2039.
|
[7] |
LIANG M, ZHENG T, LI Y. An improved analytical model for predicting the switching performance of SiC MOSFETs[J]. Journal of Power Electronics, 2016, 16(1): 374-387.
|
[8] |
OKAMOTO D, YANO H, HIRATA K, et al. Improved inversion channel mobility in 4H-SiC MOSFETs on Si Face utilizing Phosphorus-doped gate oxide[J]. IEEE Electron Device Letters, 2010, 31(7): 710-712.
|
[9] |
YOSHIOKA H, SENZAKI J, SHIMOZATO A, et al. N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces[J]. AIP Advances, 2015, 5(1): 017109(1-12.)
|
[10] |
ROZEN J, AHYI A C, ZHU X G, et al. Scaling between channel mobility and interface state density in SiC MOSFETs[J]. IEEE Transactions on Electron Devices, 2011, 58(11): 3808-3811.
|
[11] |
ARRIBAS A P, SHANG F, KRISHNAMURTHY M, et al. Simple and accurate circuit simulation model for SiC power MOSFETs[J]. IEEE Transactions on Electron Devices, 2015, 62(2): 449-457.
|
[12] |
FU R Y, GREKOV A, HHUDGINSJ, et al. Power SiC DMOSFET model accounting for nonuniform current distribution in JFET region[J]. IEEE Transactions on Industry Applications, 2012, 48(1): 181-190.
|
[13] |
ARNOLD E. Charge-sheet model for silicon carbide inversion layers[J]. IEEE Transactions on Electron Devices, 1999, 46(3): 497-503.
|
[14] |
PREZ-TOMS A, BROSSELARD P, GODIGNON P, et al. Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors[J]. Journal of Applied Physics, 2006, 100(11): 114508(1-6).
|
[15] |
YU A Z, WHITE M H, DAS M K. Electron transport modeling in the inversion layers of 4H and 6H-SiC MOSFETs on implanted regions[J]. Solid-State Electronics, 2005, 49(6): 1017-1028.
|
[16] |
Cree, Inc. C2M0080120D Silicon Carbide MOSFET datasheet[EB/OL]. [2015-12], http://www.wolfspeed.com/c2m0080120d.
|
[17] |
TANIMOTO Y, SAITO A, MATSUURA K, et al. Power-loss prediction of high-voltage SiC-MOSFET, circuits with compact model including carrier-trap influences[J]. IEEE Transactions on Power Electronics, 2016, 31(6): 4509-4516.
|
[18] |
PREZ-TOMS A, GODIGNON P, MESTRES N, et al. A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface[J]. Microelectronic Engineering, 2006, 83(3): 440-445.
|
[19] |
刘莉, 杨银堂. SiC/SiO2界面形貌对SiC MOS器件沟道迁移率的影响[J]. 浙江大学学报, 2016, 50(2): 392-396.LIU Li, YANG Yintang. Effection of morphology of SiC/SiO2 interface on mobility characteristics of MOS devices[J]. Journal of Zhejiang University, 2016, 50(2): 392-396.
|
[1] |
胡林辉, 谢家纯, 王丽玉, 等. 4H-SiC肖特基势垒二极管温度特性研究[J]. 中国科学技术大学学报, 2003, 33(6): 688-691.HU Linhui, XIE Jiachun, WANG Liyu,et al.Temperature characteristics of 4H-SiC Schottky barrier diodes[J]. Journal of University of Science and Technoloty of China, 2003, 33(6): 688-691.
|
[2] |
徐军, 谢家纯, 董小波, 等. 宽禁带SiC肖特基势垒二极管的研制[J]. 中国科学技术大学学报, 2002, 32(3): 320-323.XU Jun, XIE Jiachun, DONG Xiaobao, WANG Keyan, et al. Ni Schottky barrier diodes on n-type 4H-Silicon Carbide[J]. Journal of University of Science and Technoloty of China, 2002, 32(3): 320-323.
|
[3] |
孙凯, 陆钰晶, 吴红飞, 等.碳化硅MOSFET的变温度参数建模[J].中国电机工程学报, 2013, 33(3): 37-43.SUN Kai, LU Juejing, WU Hongfei, et al. Modeling of SiC MOSFET with temperature dependent parameter[J].Proceedings of the CSEE, 2013, 33(3): 37-43.
|
[4] |
WANG J, ZHAO T, LI J, et al. Characterization, modeling and application of 10 kV SiC MOSFET[J]. IEEE Transactions on Electron Devices, 2008, 55(8): 1798-1805.
|
[5] |
PUSHPAKARAN B N, BAYNE S, OGUNNIYI A A, et al. Physics-based simulation of 4H-SiC DMOSFET structure under inductive switching[J]. Journal of Computational Electronics, 2016, 1(15): 191-199.
|
[6] |
POTBHARE S, GOLDSMAN N, LELIS A, et al. A physical model of high temperature 4H-SiC MOSFETs[J]. IEEE Transactions on Electron Devices, 2008, 55(8): 2029-2039.
|
[7] |
LIANG M, ZHENG T, LI Y. An improved analytical model for predicting the switching performance of SiC MOSFETs[J]. Journal of Power Electronics, 2016, 16(1): 374-387.
|
[8] |
OKAMOTO D, YANO H, HIRATA K, et al. Improved inversion channel mobility in 4H-SiC MOSFETs on Si Face utilizing Phosphorus-doped gate oxide[J]. IEEE Electron Device Letters, 2010, 31(7): 710-712.
|
[9] |
YOSHIOKA H, SENZAKI J, SHIMOZATO A, et al. N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces[J]. AIP Advances, 2015, 5(1): 017109(1-12.)
|
[10] |
ROZEN J, AHYI A C, ZHU X G, et al. Scaling between channel mobility and interface state density in SiC MOSFETs[J]. IEEE Transactions on Electron Devices, 2011, 58(11): 3808-3811.
|
[11] |
ARRIBAS A P, SHANG F, KRISHNAMURTHY M, et al. Simple and accurate circuit simulation model for SiC power MOSFETs[J]. IEEE Transactions on Electron Devices, 2015, 62(2): 449-457.
|
[12] |
FU R Y, GREKOV A, HHUDGINSJ, et al. Power SiC DMOSFET model accounting for nonuniform current distribution in JFET region[J]. IEEE Transactions on Industry Applications, 2012, 48(1): 181-190.
|
[13] |
ARNOLD E. Charge-sheet model for silicon carbide inversion layers[J]. IEEE Transactions on Electron Devices, 1999, 46(3): 497-503.
|
[14] |
PREZ-TOMS A, BROSSELARD P, GODIGNON P, et al. Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors[J]. Journal of Applied Physics, 2006, 100(11): 114508(1-6).
|
[15] |
YU A Z, WHITE M H, DAS M K. Electron transport modeling in the inversion layers of 4H and 6H-SiC MOSFETs on implanted regions[J]. Solid-State Electronics, 2005, 49(6): 1017-1028.
|
[16] |
Cree, Inc. C2M0080120D Silicon Carbide MOSFET datasheet[EB/OL]. [2015-12], http://www.wolfspeed.com/c2m0080120d.
|
[17] |
TANIMOTO Y, SAITO A, MATSUURA K, et al. Power-loss prediction of high-voltage SiC-MOSFET, circuits with compact model including carrier-trap influences[J]. IEEE Transactions on Power Electronics, 2016, 31(6): 4509-4516.
|
[18] |
PREZ-TOMS A, GODIGNON P, MESTRES N, et al. A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface[J]. Microelectronic Engineering, 2006, 83(3): 440-445.
|
[19] |
刘莉, 杨银堂. SiC/SiO2界面形貌对SiC MOS器件沟道迁移率的影响[J]. 浙江大学学报, 2016, 50(2): 392-396.LIU Li, YANG Yintang. Effection of morphology of SiC/SiO2 interface on mobility characteristics of MOS devices[J]. Journal of Zhejiang University, 2016, 50(2): 392-396.
|