ISSN 0253-2778

CN 34-1054/N

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A two dimensional semi-analytical model of sub-threshold surface potential analysis for fully depleted SOI MOSFET

  • 1.

    School of Electronics and Information Engineering, Anhui University, Hefei 230601, China

  • 2.

    The 58th Research Institute of China Electronics Technology Group Corporation (CETC), Wuxi 204000, China

Cite this:
https://doi.org/10.3969/j.issn.0253-2778.2018.01.010
  • Received Date: 08 March 2017
  • Rev Recd Date: 09 May 2017
  • Publish Date: 31 January 2018
    Abstract

  • Abstract

    Based on the principle of the SOI MOSFT, a definite solution of potential is proposed by introducing three rectangular sources in the oxide layer, depletion layer and buried oxide layer. The potential distribution of the three region has been obtained by means of the variables separation method, Fourier expansion method and the integral method. The solution is a special function of the infinite series expressions. The simulation results show that the proposed semi-analytical model has high precision and smaller calculation and can be applied to circuit simulation programs.

    Abstract

    Based on the principle of the SOI MOSFT, a definite solution of potential is proposed by introducing three rectangular sources in the oxide layer, depletion layer and buried oxide layer. The potential distribution of the three region has been obtained by means of the variables separation method, Fourier expansion method and the integral method. The solution is a special function of the infinite series expressions. The simulation results show that the proposed semi-analytical model has high precision and smaller calculation and can be applied to circuit simulation programs.
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    • References(12)
  • [1]
    CHAUDHRY A，KUMMER M J. Controlling short-channel effects in deep-submicron SOI MOSFETs for improved reliability: A review[J]. IEEE Transactions on Device and Materials Reliability, 2004, 4(1): 99-109.
    [2]
    曹磊，刘红侠. 考虑量子效应的高k栅介质SOI MOSFET特性研究 [J]. 物理学报, 2012, 61(24): 470-475.
    [3]
    ITOH A, SAITOH M, ASADA M. Very short channel metal-gate Schottky source/drain SOI-PMOSFETs and their short channel effect [C]// 58th DRC Device Research Conference. Denver, USA:IEEE Press, 2000: 77-78.
    [4]
    YOUNG K K. Short-channel effect in fully depleted SOI MOSFET’s [J]. IEEE Transactions on Electron Devices, 1989, 36(2): 399-402.
    [5]
    TSORMPATZOGLOU A, DIMITRIADIS C A, CLERC R, et al. Semianalytical modeling of short-channel effects in lightly doped silicon trigate MOSFETs [J]. IEEE Transactions on Electron Devices, 2008, 55(10): 2623-2631.
    [6]
    WANG H P. New analytical models of subthreshold surface potential and subthreshold cur current of fully depleted short-channel silicon-on-insulator MOSFETs with halo or pocket implantation [J]. Japanese Journal of Applied Physics, 2014, 53(6): 064301.
    [7]
    SARAMEKALA G K, TIWARI P K. An analytical threshold voltage model of fully depleted (FD) recessed-source/drain (Re-S/D) SOI MOSFETs with back-gate control [J]. Journal of Electronic Materials, 2016, 45(10): 1-8.
    [8]
    BANNA S R, CHAN M, KO P, et al. Threshold voltage model for deep-submicrometer fully depleted SOI MOSFET’s [J]. IEEE Transactions on Electron Devices, 1995, 42(11): 1949-1955.
    [9]
    CHANG K M, WANG H P. A simple 2D analytical threshold voltage model for fully depleted short-channel silicon-on-insulator MOSFETs [J]. Semiconductor Science & Technology, 2004, 19(12): 1397-1405.
    [10]
    MALAKAR T D, BASU S, BHATTACHARYYA P, et al. Computationally comprehensive and efficient generalized poisson’s solution for better nanoscale SOI MOSFET [C]// International Conference on Computational Intelligence and Communication Networks. Bhopal, India : IEEE Press, 2014: 1016-1020.
    [11]
    盛剑霓, 马齐爽, 袁斌．电磁场与电磁波分析中的半解析法的理论方法与应用 [M]．北京：科学出版社, 2006.
    [12]
    柯导明, 陈军宁. 数学物理方法[M]. 北京: 机械工业出版社, 2008.
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    [1]
    CHAUDHRY A，KUMMER M J. Controlling short-channel effects in deep-submicron SOI MOSFETs for improved reliability: A review[J]. IEEE Transactions on Device and Materials Reliability, 2004, 4(1): 99-109.
    [2]
    曹磊，刘红侠. 考虑量子效应的高k栅介质SOI MOSFET特性研究 [J]. 物理学报, 2012, 61(24): 470-475.
    [3]
    ITOH A, SAITOH M, ASADA M. Very short channel metal-gate Schottky source/drain SOI-PMOSFETs and their short channel effect [C]// 58th DRC Device Research Conference. Denver, USA:IEEE Press, 2000: 77-78.
    [4]
    YOUNG K K. Short-channel effect in fully depleted SOI MOSFET’s [J]. IEEE Transactions on Electron Devices, 1989, 36(2): 399-402.
    [5]
    TSORMPATZOGLOU A, DIMITRIADIS C A, CLERC R, et al. Semianalytical modeling of short-channel effects in lightly doped silicon trigate MOSFETs [J]. IEEE Transactions on Electron Devices, 2008, 55(10): 2623-2631.
    [6]
    WANG H P. New analytical models of subthreshold surface potential and subthreshold cur current of fully depleted short-channel silicon-on-insulator MOSFETs with halo or pocket implantation [J]. Japanese Journal of Applied Physics, 2014, 53(6): 064301.
    [7]
    SARAMEKALA G K, TIWARI P K. An analytical threshold voltage model of fully depleted (FD) recessed-source/drain (Re-S/D) SOI MOSFETs with back-gate control [J]. Journal of Electronic Materials, 2016, 45(10): 1-8.
    [8]
    BANNA S R, CHAN M, KO P, et al. Threshold voltage model for deep-submicrometer fully depleted SOI MOSFET’s [J]. IEEE Transactions on Electron Devices, 1995, 42(11): 1949-1955.
    [9]
    CHANG K M, WANG H P. A simple 2D analytical threshold voltage model for fully depleted short-channel silicon-on-insulator MOSFETs [J]. Semiconductor Science & Technology, 2004, 19(12): 1397-1405.
    [10]
    MALAKAR T D, BASU S, BHATTACHARYYA P, et al. Computationally comprehensive and efficient generalized poisson’s solution for better nanoscale SOI MOSFET [C]// International Conference on Computational Intelligence and Communication Networks. Bhopal, India : IEEE Press, 2014: 1016-1020.
    [11]
    盛剑霓, 马齐爽, 袁斌．电磁场与电磁波分析中的半解析法的理论方法与应用 [M]．北京：科学出版社, 2006.
    [12]
    柯导明, 陈军宁. 数学物理方法[M]. 北京: 机械工业出版社, 2008.
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