Effect of post-annealing on the structure and dielectric property of La2Ti2O7 thin film

SHAO Tao; WANG Yuyin; LI Yuanyuan; YANG Mei; HU Chuansheng; QI Zeming

doi:10.3969/j.issn.0253-2778.2017.12.010

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Open Access JUSTC Original Paper

Effect of post-annealing on the structure and dielectric property of La2Ti2O7 thin film

National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China

Funds: Supported by the National Natural Science Foundation of China (11275203, U1732148), National Key Scientific Instrument and Equipment Development Project (2011YQ130018), Technological Development Grant of Hefei Science Center of CAS (2014TDG-HSC002).

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https://doi.org/10.3969/j.issn.0253-2778.2017.12.010

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Author Bio:
SHAO Tao, male, born in 1987, Master candidate. Research field: dielectric properties of metal oxide thin films. E-mail: shaotao@mail.ustc.edu.cn
Corresponding author: QI Zeming
Received Date: 30 May 2016
Rev Recd Date: 05 July 2016
Publish Date: 30 December 2017

Abstract Full text PDF

Abstract

Abstract

La2Ti2O7 thin films were grown on Si (100) substrates by using pulsed laser deposition method. The effect of post-annealing on the structural and dielectric properties of the films at different temperatures was studied by using X-ray diffraction, atomic force microscopy and synchrotron infrared transmission spectroscopy. The results show that the as-deposited thin film is amorphous and annealing thin film is crystallized into monoclinic structure. The infrared spectrum reveals that the annealing can significantly increase the dielectric constant. The as-deposited thin film has a low dielectric constant attributed to the loss of some phonon modes, especially the low frequency mode. This indicates post-annealing has an important influence on the dielectric property of La2Ti2O7 thin film.

Abstract

La2Ti2O7 thin films were grown on Si (100) substrates by using pulsed laser deposition method. The effect of post-annealing on the structural and dielectric properties of the films at different temperatures was studied by using X-ray diffraction, atomic force microscopy and synchrotron infrared transmission spectroscopy. The results show that the as-deposited thin film is amorphous and annealing thin film is crystallized into monoclinic structure. The infrared spectrum reveals that the annealing can significantly increase the dielectric constant. The as-deposited thin film has a low dielectric constant attributed to the loss of some phonon modes, especially the low frequency mode. This indicates post-annealing has an important influence on the dielectric property of La2Ti2O7 thin film.