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[2] |
Yang S C, Lin T Y, Ochoa M, et al. Efficiency boost of bifacial Cu(In, Ga)Se2 thin-film solar cells for flexible and tandem applications with silver-assisted low-temperature process. Nature Energy, 2023, 8 (1): 40–51. doi: 10.1038/s41560-022-01157-9
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[3] |
Burst J M, Duenow J N, Albin D S, et al. CdTe solar cells with open-circuit voltage breaking the 1 V barrier. Nature Energy, 2016, 1 (3): 16015. doi: 10.1038/nenergy.2016.15
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[4] |
Tang R F, Wang X M, Lian W T, et al. Hydrothermal deposition of antimony selenosulfide thin films enables solar cells with 10% efficiency. Nature Energy, 2020, 5 (8): 587–595. doi: 10.1038/s41560-020-0652-3
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[5] |
Chen G J, Luo Y D, Abbas M, et al. Suppressing buried interface nonradiative recombination losses toward high-efficiency antimony triselenide solar cells. Advanced Materials, 2024, 36 (5): 2308522. doi: 10.1002/adma.202308522
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[6] |
Chen S, Fu Y, Ishaq M, et al. Carrier recombination suppression and transport enhancement enable high-performance self-powered broadband Sb2Se3 photodetectors. InfoMat, 2023, 5 (4): e12400. doi: 10.1002/inf2.12400
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[7] |
Tang R, Chen S, Zheng Z H, et al. Heterojunction annealing enabling record open-circuit voltage in antimony triselenide solar cells. Advanced Materials, 2022, 34 (14): 2109078. doi: 10.1002/adma.202109078
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[8] |
Luo Y D, Chen G J, Chen S, et al. Carrier transport enhancement mechanism in highly efficient antimony selenide thin-film solar cell. Advanced Functional Materials, 2023, 33 (14): 2213941. doi: 10.1002/adfm.202213941
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[9] |
Chen X L, Che B, Zhao Y Q, et al. Solvent-assisted hydrothermal deposition approach for highly-efficient Sb2(S, Se)3 thin-film solar cells. Advanced Energy Materials, 2023, 13 (21): 2300391. doi: 10.1002/aenm.202300391
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[10] |
Li G, Dong J B, Xiao P, et al. Dual effect of NH4F additive in the hydrothermal deposition of antimony selenosulfide thin film for high-performance solar cells. Science China Materials, 2022, 65 (12): 3411–3417. doi: 10.1007/s40843-022-2066-5
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[11] |
Wang X M, Tang R F, Jiang C H, et al. Manipulating the electrical properties of Sb2(S, Se)3 film for high-efficiency solar cell. Advanced Energy Materials, 2020, 10 (40): 2002341. doi: 10.1002/aenm.202002341
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[12] |
Pan X Y, Pan Y L, Shen L Y, et al. All-vacuum-processed Sb2(S, Se)3 thin film photovoltaic devices via controllable tuning seed orientation. Advanced Functional Materials, 2023, 33 (22): 2214511. doi: 10.1002/adfm.202214511
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Liu J J, Cao M S, Feng Z D, et al. Thermal evaporation–deposited hexagonal CdS buffer layer with improved quality, enlarged band gap, and reduced band gap offset to boost performance of Sb2(S, Se)3 solar cells. Journal of Alloys and Compounds, 2022, 920 (1): 165885. doi: 10.1016/j.jallcom.2022.165885
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[14] |
Cheng J, Zhang Z, Zhao M H, et al. High-efficiency Sb2Se3 thin-film solar cells based on Cd(S, O) buffer layers prepared via spin-coating. Materials Chemistry and Physics, 2023, 303 (1): 127794. doi: 10.1016/j.matchemphys.2023.127794
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Li K, Cai Z Y, Yang J J, et al. Molecular beam epitaxy deposition of in situ O-doped CdS films for highly efficient Sb2(S, Se)3 solar cells. Advanced Functional Materials, 2023, 33 (48): 2304141. doi: 10.1002/adfm.202304141
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Schwartz C, Nordlund D, Weng T C, et al. Electronic structure study of the CdS buffer layer in CIGS solar cells by X-ray absorption spectroscopy: experiment and theory. Solar Energy Materials and Solar Cells, 2016, 149 (1): 275–283. doi: 10.1016/j.solmat.2016.01.043
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Ge J, Koirala P, Grice C R, et al. Oxygenated CdS buffer layers enabling high open-circuit voltages in earth-abundant Cu2BaSnS4 thin-film solar cells. Advanced Energy Materials, 2017, 7 (6): 1601803. doi: 10.1002/aenm.201601803
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Guo L, Zhang B, Ranjit S, et al. Interface engineering via sputtered oxygenated CdS: O window layer for highly efficient Sb2Se3 thin-film solar cells with efficiency above 7%. Solar RRL, 2019, 3 (10): 1900225. doi: 10.1002/solr.201900225
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Hu X B, Tao J H, Wang Y Y, et al. 5.91%-efficient Sb2Se3 solar cells with a radio-frequency magnetron-sputtered CdS buffer layer. Applied Materials Today, 2019, 16 (1): 367–374. doi: 10.1016/j.apmt.2019.06.001
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Kephart J M, Geisthardt R M, Sampath W S. Optimization of CdTe thin-film solar cell efficiency using a sputtered, oxygenated CdS window layer. Progress in Photovoltaics: Research and Applications, 2015, 23 (11): 1484–1492. doi: 10.1002/pip.2578
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Liu Y F, Li B, Liang X Y, et al. Reactively sputtered CdS: O buffer layers for substrate Sb2Se3 solar cells. Journal of Alloys and Compounds, 2023, 932 (1): 167313. doi: 10.1016/j.jallcom.2022.167313
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Ou C Z, Shen K, Li Z Q, et al. Bandgap tunable CdS: O as efficient electron buffer layer for high-performance Sb2Se3 thin film solar cells. Solar Energy Materials and Solar Cells, 2019, 194: 47–53. doi: 10.1016/j.solmat.2019.01.043
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Wang K C, Shen P S, Li M H, et al. Low-temperature sputtered nickel oxide compact thin film as effective electron blocking layer for mesoscopic NiO/CH3NH3PbI3 perovskite heterojunction solar cells. ACS Applied Materials & Interfaces, 2014, 6 (15): 11851–11858. doi: 10.1021/am503610u
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![]() |
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Figure 1. X-ray diffraction (XRD) pattern of the sputtered CdS thin film. The deposition time was 2 h, four times the standard CdS growth time. (a) CdS sputtered on a glass substrate at different temperatures. (b) CdS sputtered on an FTO substrate. The positions of the FTO diffraction peaks are labeled with asterisks. (c) Grazing incidence XRD (GIXRD) result of CdS sputtered on an FTO substrate. The incident angle is 0.4°, and no FTO substrate peaks are found.
Figure 5. Photovoltaic performance of the devices. (a) Current density–voltage (J–V) curves of Sb2(S,Se)3 solar cell devices grown on sputtered CdS under different substrate heating conditions. Statistical boxplots of the photovoltaic parameters (b) power conversion efficiency (PCE), (c) short-circuit current density (JSC), (e) open-circuit voltage (VOC), and (f) fill factor (FF) of the corresponding devices. (d) External quantum efficiency (EQE) spectra of the corresponding devices.
Figure 6. Characterization of Sb2(S,Se)3 solar cell devices grown on sputtered CdS under different substrate heating conditions. Dark current results are shown in the first row with (a) J–V curve, (b) dJ/dV versus voltage plot, and (c) dV/dJ versus (J+JSC)−1 plot. Here, the dark J–V data were measured starting at +3 V, so that (J+JSC)−1 increased to approximately 0.002 mA−1·cm2. Under very high voltage conditions, the derivative increases, forming a tail at the end of the curve. However, this does not influence the analysis by using the well-defined linear part of the curve. The light intensity, electrochemical characterization and carrier transport kinetics of the devices are shown next. (d) Relation between VOC and the logarithm of the incident light intensity. (e) Relation between JSC and the incident light intensity. (f) Nyquist plots (under dark conditions at −0.60 V) of the devices. (g) Original data and fitted curves of transient decay kinetics monitored at 665 nm for Sb2(S,Se)3 films grown on sputtered CdS at RT and at 200 °C.
Figure 7. Characterization related to oxygen plasma treatment of sputtered CdS. (a) Full-wavelength EQE spectra of devices with (15 min) and without oxygen plasma treatment (OPT). (b) Champion device efficiency with and without oxygen plasma treatment. (c) Oxygen content and Cd∶S ratio under different oxygen plasma treatment conditions. The results are based on EDS data. (d) The 1/C2–V curves of the devices recorded at a frequency of 100 kHz at RT in the dark.
[1] |
Yan C, Huang J, Sun K, et al. Cu2ZnSnS4 solar cells with over 10% power conversion efficiency enabled by heterojunction heat treatment. Nature Energy, 2018, 3 (9): 764–772. doi: 10.1038/s41560-018-0206-0
|
[2] |
Yang S C, Lin T Y, Ochoa M, et al. Efficiency boost of bifacial Cu(In, Ga)Se2 thin-film solar cells for flexible and tandem applications with silver-assisted low-temperature process. Nature Energy, 2023, 8 (1): 40–51. doi: 10.1038/s41560-022-01157-9
|
[3] |
Burst J M, Duenow J N, Albin D S, et al. CdTe solar cells with open-circuit voltage breaking the 1 V barrier. Nature Energy, 2016, 1 (3): 16015. doi: 10.1038/nenergy.2016.15
|
[4] |
Tang R F, Wang X M, Lian W T, et al. Hydrothermal deposition of antimony selenosulfide thin films enables solar cells with 10% efficiency. Nature Energy, 2020, 5 (8): 587–595. doi: 10.1038/s41560-020-0652-3
|
[5] |
Chen G J, Luo Y D, Abbas M, et al. Suppressing buried interface nonradiative recombination losses toward high-efficiency antimony triselenide solar cells. Advanced Materials, 2024, 36 (5): 2308522. doi: 10.1002/adma.202308522
|
[6] |
Chen S, Fu Y, Ishaq M, et al. Carrier recombination suppression and transport enhancement enable high-performance self-powered broadband Sb2Se3 photodetectors. InfoMat, 2023, 5 (4): e12400. doi: 10.1002/inf2.12400
|
[7] |
Tang R, Chen S, Zheng Z H, et al. Heterojunction annealing enabling record open-circuit voltage in antimony triselenide solar cells. Advanced Materials, 2022, 34 (14): 2109078. doi: 10.1002/adma.202109078
|
[8] |
Luo Y D, Chen G J, Chen S, et al. Carrier transport enhancement mechanism in highly efficient antimony selenide thin-film solar cell. Advanced Functional Materials, 2023, 33 (14): 2213941. doi: 10.1002/adfm.202213941
|
[9] |
Chen X L, Che B, Zhao Y Q, et al. Solvent-assisted hydrothermal deposition approach for highly-efficient Sb2(S, Se)3 thin-film solar cells. Advanced Energy Materials, 2023, 13 (21): 2300391. doi: 10.1002/aenm.202300391
|
[10] |
Li G, Dong J B, Xiao P, et al. Dual effect of NH4F additive in the hydrothermal deposition of antimony selenosulfide thin film for high-performance solar cells. Science China Materials, 2022, 65 (12): 3411–3417. doi: 10.1007/s40843-022-2066-5
|
[11] |
Wang X M, Tang R F, Jiang C H, et al. Manipulating the electrical properties of Sb2(S, Se)3 film for high-efficiency solar cell. Advanced Energy Materials, 2020, 10 (40): 2002341. doi: 10.1002/aenm.202002341
|
[12] |
Pan X Y, Pan Y L, Shen L Y, et al. All-vacuum-processed Sb2(S, Se)3 thin film photovoltaic devices via controllable tuning seed orientation. Advanced Functional Materials, 2023, 33 (22): 2214511. doi: 10.1002/adfm.202214511
|
[13] |
Liu J J, Cao M S, Feng Z D, et al. Thermal evaporation–deposited hexagonal CdS buffer layer with improved quality, enlarged band gap, and reduced band gap offset to boost performance of Sb2(S, Se)3 solar cells. Journal of Alloys and Compounds, 2022, 920 (1): 165885. doi: 10.1016/j.jallcom.2022.165885
|
[14] |
Cheng J, Zhang Z, Zhao M H, et al. High-efficiency Sb2Se3 thin-film solar cells based on Cd(S, O) buffer layers prepared via spin-coating. Materials Chemistry and Physics, 2023, 303 (1): 127794. doi: 10.1016/j.matchemphys.2023.127794
|
[15] |
Li K, Cai Z Y, Yang J J, et al. Molecular beam epitaxy deposition of in situ O-doped CdS films for highly efficient Sb2(S, Se)3 solar cells. Advanced Functional Materials, 2023, 33 (48): 2304141. doi: 10.1002/adfm.202304141
|
[16] |
Schwartz C, Nordlund D, Weng T C, et al. Electronic structure study of the CdS buffer layer in CIGS solar cells by X-ray absorption spectroscopy: experiment and theory. Solar Energy Materials and Solar Cells, 2016, 149 (1): 275–283. doi: 10.1016/j.solmat.2016.01.043
|
[17] |
Ge J, Koirala P, Grice C R, et al. Oxygenated CdS buffer layers enabling high open-circuit voltages in earth-abundant Cu2BaSnS4 thin-film solar cells. Advanced Energy Materials, 2017, 7 (6): 1601803. doi: 10.1002/aenm.201601803
|
[18] |
Guo L, Zhang B, Ranjit S, et al. Interface engineering via sputtered oxygenated CdS: O window layer for highly efficient Sb2Se3 thin-film solar cells with efficiency above 7%. Solar RRL, 2019, 3 (10): 1900225. doi: 10.1002/solr.201900225
|
[19] |
Hu X B, Tao J H, Wang Y Y, et al. 5.91%-efficient Sb2Se3 solar cells with a radio-frequency magnetron-sputtered CdS buffer layer. Applied Materials Today, 2019, 16 (1): 367–374. doi: 10.1016/j.apmt.2019.06.001
|
[20] |
Kephart J M, Geisthardt R M, Sampath W S. Optimization of CdTe thin-film solar cell efficiency using a sputtered, oxygenated CdS window layer. Progress in Photovoltaics: Research and Applications, 2015, 23 (11): 1484–1492. doi: 10.1002/pip.2578
|
[21] |
Liu Y F, Li B, Liang X Y, et al. Reactively sputtered CdS: O buffer layers for substrate Sb2Se3 solar cells. Journal of Alloys and Compounds, 2023, 932 (1): 167313. doi: 10.1016/j.jallcom.2022.167313
|
[22] |
Ou C Z, Shen K, Li Z Q, et al. Bandgap tunable CdS: O as efficient electron buffer layer for high-performance Sb2Se3 thin film solar cells. Solar Energy Materials and Solar Cells, 2019, 194: 47–53. doi: 10.1016/j.solmat.2019.01.043
|
[23] |
Paudel N R, Poplawsky J D, Moore K L, et al. Current enhancement of CdTe-based solar cells. IEEE Journal of Photovoltaics, 2015, 5 (5): 1492–1496. doi: 10.1109/JPHOTOV.2015.2458040
|
[24] |
Shiel H, Hutter O S, Phillips L J, et al. Natural band alignments and band offsets of Sb2Se3 solar cells. ACS Applied Energy Materials, 2020, 3 (12): 11617–11626. doi: 10.1021/acsaem.0c01477
|
[25] |
Stoner J. What is Magnetron Sputtering and How Does it Work. 2022 . https://korvustech.com/magnetron-sputtering/#:~:text=The%20advantages%20of%20magnetron%20sputtering%20include%3A%201%20High,5%20Uniformity%20on%20large-area%20substrates%206%20Low%20temperature. Accessed December 26, 2023.
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[26] |
Mchugh L F, Kumar P, Meendering D, et al. Method of making high-purity (>99%) MoO2 powders, products made from MoO2 powders, deposition of MoO2 thin films, and methods of using such materials. Patent WO2005040044, 2005 .
|
[27] |
Wang K C, Shen P S, Li M H, et al. Low-temperature sputtered nickel oxide compact thin film as effective electron blocking layer for mesoscopic NiO/CH3NH3PbI3 perovskite heterojunction solar cells. ACS Applied Materials & Interfaces, 2014, 6 (15): 11851–11858. doi: 10.1021/am503610u
|
[28] |
Wan L, Bai Z Z, Hou Z R, et al. Effect of CdCl2 annealing treatment on thin CdS films prepared by chemical bath deposition. Thin Solid Films, 2010, 518 (23): 6858–6865. doi: 10.1016/j.tsf.2010.07.011
|
[29] |
Cai H L, Cao R, Gao J X, et al. Interfacial engineering towards enhanced photovoltaic performance of Sb2Se3 solar cell. Advanced Functional Materials, 2022, 32 (46): 2208243. doi: 10.1002/adfm.202208243
|
[30] |
Yu M, Kenny S D. Using atomistic simulations to model cadmium telluride thin film growth. Journal of Physics: Condensed Matter, 2016, 28 (10): 105002. doi: 10.1088/0953-8984/28/10/105002
|
[31] |
de Assis T A, Aarão Reis F D A. Thin film deposition with time-varying temperature. Journal of Statistical Mechanics: Theory and Experiment, 2013, 2013 (10): P10008. doi: 10.1088/1742-5468/2013/10/P10008
|
[32] |
Blackwell S, Smith R, Kenny S D, et al. Modelling the growth of ZnO thin films by PVD methods and the effects of post-annealing. Journal of Physics: Condensed Matter, 2013, 25 (13): 135002. doi: 10.1088/0953-8984/25/13/135002
|
[33] |
Liu M, Man B Y, Lin X C, et al. Effect of temperature on pulsed laser deposition of HgCdTe films. Applied Surface Science, 2007, 253 (24): 9291–9294. doi: 10.1016/j.apsusc.2007.05.070
|
[34] |
Kephart J M, McCamy J W, Ma Z, et al. Band alignment of front contact layers for high-efficiency CdTe solar cells. Solar Energy Materials and Solar Cells, 2016, 157 (1): 266–275. doi: 10.1016/j.solmat.2016.05.050
|
[35] |
Wetzelaer G A H, Kuik M, Nicolai H T, et al. Trap-assisted and Langevin-type recombination in organic light-emitting diodes. Physical Review B, 2011, 83 (16): 165204. doi: 10.1103/PhysRevB.83.165204
|
[36] |
Wetzelaer G J A H, Scheepers M, Sempere A M, et al. Trap-assisted non-radiative recombination in organic–inorganic perovskite solar cells. Advanced Materials, 2015, 27 (11): 1837–1841. doi: 10.1002/adma.201405372
|
[37] |
Woo J C S, Plummer J D, Stork J M C. Non-ideal base current in bipolar transistors at low temperatures. IEEE Transactions on Electron Devices, 1987, 34 (1): 130–138. doi: 10.1109/T-ED.1987.22895
|
[38] |
Kaminski A, Marchand J J, Laugier A. Non ideal dark I–V curves behavior of silicon solar cells. Solar Energy Materials and Solar Cells, 1998, 51 (3/4): 221–231. doi: 10.1016/S0927-0248(97)00216-X
|
[39] |
Liang G X, Chen M D, Ishaq M, et al. Crystal growth promotion and defects healing enable minimum open-circuit voltage deficit in antimony selenide solar cells. Advanced Science, 2022, 9 (9): 2105142. doi: 10.1002/advs.202105142
|
[40] |
Ishaq M, Deng H, Yuan S J, et al. Efficient double buffer layer Sb2(SexS1–x)3 thin film solar cell via single source evaporation. Solar RRL, 2018, 2 (10): 1800144. doi: 10.1002/solr.201800144
|
[41] |
Zhao J, Li X R, Lin J H, et al. Unveiling the influence of absorber thickness on efficient Sb2(S, Se)3 solar cells through controlled chemical bath deposition. Surfaces and Interfaces, 2023, 42 (1): 103411. doi: 10.1016/j.surfin.2023.103411
|
[42] |
Li J M, Zhao Y Q, Li C, et al. Hydrazine hydrate-induced surface modification of CdS electron transport layer enables 10.30%-efficient Sb2(S, Se)3 planar solar cells. Advanced Science, 2022, 9 (25): 2202356. doi: 10.1002/advs.202202356
|
[43] |
Sites J R, Mauk P H. Diode quality factor determination for thin-film solar cells. Solar Cells, 1989, 27 (1): 411–417. doi: 10.1016/0379-6787(89)90050-1
|
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